MSC82100
DESCRIPTION
The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 d B pression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base 4. Emitter
PDISS IC VCE TJ T STG
Power Dissipation Device Bias Current
(see Safe Area)
- 200 20 200
- 65 to +200
W m A V °C °C
Collector-Emitter Bias Voltage- Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 20 °C/W
- Applies only to rated RF amplifier operation
October 1992
1/6
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO I CEO h FE DYNAMIC
Symbol
IC = 1m A IE = 1m A IC = 5m A VCE = 18V VCE = 5V
IE = 0m A IC = 0m A IB = 0m A IC = 100m A
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