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MSC82100 Datasheet

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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MSC82100
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
. EMITTER BALLASTED
. CLASS A LINEAR OPERATION
. COMMON EMITTER
. VSWR CAPABILITY :1 @ RATED
CONDITIONS
. ft 1.6 GHz TYPICAL
. NOISE FIGURE 15.5 dB @ 2 GHz
. POUT = 27 dBm MIN. @ 1.0 GHz
.250 2LFL (S011)
hermetically sealed
ORDER CODE
MSC82100
BRANDING
82100
www.DataSheet4U.com
PIN CONNECTION
DESCRIPTION
The MSC82100 is a hermetically sealed NPN
power transistor with a fishbone, emitter finger
ballasted geometry utilizing a refractory/gold me-
tallization system. The device is designed speci-
fically for Class A linear applications to provide
high gain and high output power at the 1.0 dB
compression point.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
PDISS
IC
VCE
TJ
TSTG
Power Dissipation (see Safe Area)
Device Bias Current
Collector-Emitter Bias Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
200
20
200
65 to +200
Unit
W
mA
V
°C
°C
20 °C/W
1/6


STMicroelectronics Electronic Components Datasheet

MSC82100 Datasheet

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

No Preview Available !

MSC82100
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVEBO
BVCEO
ICEO
hFE
IC = 1mA
IE = 1mA
IC = 5mA
VCE = 18V
VCE = 5V
IE = 0mA
IC = 0mA
IB = 0mA
IC = 100mA
Min.
45
3.5
20
15
Va l u e
Typ. Max.
——
——
——
— 0.5
— 120
Unit
V
V
V
mA
DYNAMIC
S ymb o l
GP* f = 1.0 GHz
GP* f = 1.0 GHz
COB f = 1 MHz
* Note: VCE = 18V
IC = 100mA
Test Conditions
POUT = 27 dBm
POUT = 27 dBm
VCB = 28 V
POUT = 10 dB
Value
Min. Typ. Max.
10.5 11.5 —
—— 1
— — 3.2
Unit
dB
dB
pF
2/6


Part Number MSC82100
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Maker STMicroelectronics
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MSC82100 Datasheet PDF






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