Datasheet Details
| Part number | MSC82100 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 112.62 KB |
| Description | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| Datasheet | MSC82100_STMicroelectronics.pdf |
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Overview: MSC82100 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION MON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz P OUT = 27 dBm MIN. @ 1.0 GHz .250 2LFL (S011) hermetically sealed ORDER CODE MSC82100 BRANDING 82100 PIN CONNECTION ..
| Part number | MSC82100 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 112.62 KB |
| Description | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| Datasheet | MSC82100_STMicroelectronics.pdf |
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The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system.
The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB pression point.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.
| Part Number | Description |
|---|---|
| MSC82001 | RF & MICROWAVE TRANSISTORS |
| MSC82003 | RF & MICROWAVE TRANSISTORS |
| MSC82005 | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| MSC82010 | RF & MICROWAVE TRANSISTORS |
| MSC82040 | RF & MICROWAVE TRANSISTORS |
| MSC82302 | RF & MICROWAVE TRANSISTORS |
| MSC82304 | RF & MICROWAVE TRANSISTORS |
| MSC82306 | RF & MICROWAVE TRANSISTORS |
| MSC82307 | RF & MICROWAVE TRANSISTORS |
| MSC80185 | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |