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MSS40 Datasheet

(MSS40 / MSS50) BACK TO BACK SCR MODULE

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MSS40, MSS50
Back to back SCR module
Table 1. Main features
Symbol
Value
IT(RMS)
55 and 70
Unit
A
G2
A2
VDRM/VRRM
800 and 1200
V
A1
IGT 50 mA
G1
Description
t(s)Packaged in ISOTOP modules, the MSS40 /
MSS50 Series is based on two back-to-back SCR
ucconfigurations, providing high noise immunity.
dThey are suitable for high power applications such
roas solid state relays, heating control systems,
welding equipment, motor control circuits...
te PThe compactness of the ISOTOP package allows
lehigh power density and optimized power bus
connections. Thanks to their internal ceramic pad,
sothey provide high voltage insulation (2500 VRMS),
bcomplying with UL standards (File ref: E81734).
- OFigure 1. Pin connections
ISOTOP
Table 2. Order codes
Part numbers
MSS40-1200
MSS50-800
MSS50-1200
Marking
MSS40-1200
MSS50-800
MSS50-1200
roduct(s)1:Thyristor 2 Anode (A2)
P2: Thyristor 2 Gate (G2)
te3: Thyristor 1 Anode (A1)
Obsole4:Thyristor 2 Gate (G1)
43
12
G1
A1 A2
G2
July 2007
Rev 4
1/7
www.st.com
7


STMicroelectronics Electronic Components Datasheet

MSS40 Datasheet

(MSS40 / MSS50) BACK TO BACK SCR MODULE

No Preview Available !

Characteristics
1 Characteristics
MSS40, MSS50
Table 3. Absolute ratings (limiting values)
Symbol
Parameter
Value
MSS40 MSS50
Unit
VDRM/VRRM Repetitive peak off-state voltage
1200
800
1200
V
IT(RMS) RMS on-state current
Tc = 80° C
55
A
Tc = 85° C
70
ITSM
I2t
Non repetitive surge peak on-state
current
I2t Value for fusing
tp = 16.7 ms
tp = 20 ms
tp = 10 ms
Tj = 25° C
Tj = 25° C
420 630
400 600
A
800 1800 A2S
dI/dt
)IGM
t(sPG(AV)
cTstg
uTj
rodVRGM
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
F = 120 Hz
tp = 20 µs
Tj = 125° C
Tj = 125° C
Tj = 125° C
50
4
1
- 40 to + 150
- 40 to + 125
5
PTable 4.
oleteSymbol
Electrical characteristics (Tj = 25° C, unless otherwise specified)
Test Conditions
Value
MSS40 MSS50
bsIGT
- OVGT
t(s)VGD
IH
ucIL
ddV/dt
ProVTM
teVt0
oleRd
sIDRM
ObIRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open
ITM = 80 A tp = 380 µs
ITM = 100 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
5
50
1.3
0.2
80
120
1000
1.7
1.7
0.85
11 7
20
10
A/µs
A
W
°C
V
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 5. Thermal reistances
Symbol
Rth(j-c) Junction to case (AC)
Parameter
MSS40
MSS50
Value
0.6
0.45
Unit
° C/W
2/7


Part Number MSS40
Description (MSS40 / MSS50) BACK TO BACK SCR MODULE
Maker ST Microelectronics
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MSS40 Datasheet PDF






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