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STMicroelectronics Electronic Components Datasheet

MTH40N06FI Datasheet

N-Channel Enhancement Mode Power MOS Transistors

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MTH40N06
MTH40N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
MTH40N06
MTH40N06FI
Voss
60 V
60 V
ROS(on)
0.0280
0.0280
10
40 A
26 A
• VERY LOW ON-LOSSES
• RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST) •
• LOW DRIVE ENERGY FOR EASY DRIVE
• HIGH TRANSCONDUCTANCE/Crss RATIO
AUTOMOTIVE POWER APPLICATIONS
N - channel enhancement mode POWER MOS field
effect transistors. Easy drive and very fast switching
times make these POWER MOS transistors ideal
for high speed switching circuit in applications such
as power actuator driving, motor drive including
brush less motors, hydraulic actuators and many
other uses in automotive applications.
They also find use in DCIDC converters and unin-
terruptible power supplies.
TO-218
ISOWATT218
INTERNAL SCHEMATIC
DIAGRAM
ABSOLUTE MAXIMUM RATINGS
TO-218
ISOWATT218
VDS
VDGR
VGS
IDM
Drain-sou rce voltage (VGS =0)
Drain-gate voltage (RGS = 1 MO)
Gate-source voltage
Drain current (pulsed)
Drain current (cont.) Tc = 20°C
Total dissipation at Tc <25°C
Derati ng factor
Storage temperature
Max. operating junction temperature
• See note on ISOWATT218 in this datasheet
• Introduced in 1988 week 44
June 1988
MTH40N06
MTH40N06FI
60 V
60 V
±20
V
140 A
TO-218
ISOWATT218
40 26 A
150 65 W
1.2
-65 to 150
150
1/6
379


STMicroelectronics Electronic Components Datasheet

MTH40N06FI Datasheet

N-Channel Enhancement Mode Power MOS Transistors

No Preview Available !

MTH40N06 - MTH40N06FI
THERMAL DATA •
Rthj _ case Thermal resistance junction-case
max
TI Maximum lead temperature for soldering purpose max
TO-218 ISOWATT218
0.83 1.92
275
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameters
Test Conditions
OFF
,,{BR) oss Drain-source
breakdown voltage
10= 100 p,A
VGs= Q
60
loss Zero gate voltage
Vos = Max Rating x 0.85
drain current (VGS = 0) Vos = Max Rating x 0.85 Tc= 100°C
IGSS Gate-body leakage
current (Vos = 0)
VGs= ±20 V
V
250 p,A
1000 p,A
±100 nA
ON *
VGS (th) Gate threshold
voltage
Ros (on) Static drain-source
on resistance
Vos (on) Drain-source on
voltage
Vos= VGS 10= 1 rnA
Vos= VGS 10= 1 rnA Tc= 100°C
VGs= 10 V 10= 20 A
VGs= 10 V 10= 40 A
VGS= 10 V 10= 20 A Tc= 100°C
2
1.5
4.5
4
0.028
V
V
n
1.4 V
1.12 V
ENERGY TEST
lUIS Unclamped inductive
switching current
(single pulse)
Voo= 30 V
starti ng Tj = 25°C
L = 100 p,H
40
A
DYNAMIC
gfs * Forward
transconductance
Vos= 15 V 10= 20 A
10 mho
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Vos= 25 V
VGs= 0
f= 1 MHz
5000
2500
1000
pF
pF
pF
Og Total gate charge Vos= 50 V 10= 40 A
VGS= 10 V
120 nC
- ______________2/_6_____________ ~ ~~~~m?u~:~~~~
380


Part Number MTH40N06FI
Description N-Channel Enhancement Mode Power MOS Transistors
Maker ST Microelectronics
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MTH40N06FI Datasheet PDF






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