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MTP6N60 Datasheet

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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MTP6N60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
MTP6N60
VDSS
600 V
R DS( on)
< 1.2
ID
6.8 A
s TYPICAL RDS(on) = 1
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
ID M()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
Value
600
600
± 20
6.8
4.2
30
125
1
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /oC
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

MTP6N60 Datasheet

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

No Preview Available !

MTP6N60
THERMAL DATA
Rthj-case
Rthj- amb
Rthj- amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
6.8
460
21
4.2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
600
Typ.
Max.
Unit
V
25
250
± 100
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 3 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
Typ.
3.1
1
Max.
4.5
1.2
Unit
V
6.8 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 3 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
2
Typ.
4.8
Max.
Unit
S
1150
160
75
1500
240
110
pF
pF
pF
2/9


Part Number MTP6N60
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Maker ST Microelectronics
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MTP6N60 Datasheet PDF






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