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STMicroelectronics Electronic Components Datasheet

N1HNK60 Datasheet

STN1HNK60

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STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8- 1A DPAK/TO-92/IPAK/SOT-223
SuperMESH™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STD1NK60
STD1NK60-1
STQ1HNK60R
STN1HNK60
600 V
600 V
600 V
600 V
< 8.5
< 8.5
< 8.5
< 8.5
1A
1A
0.4 A
0.4 A
30 W
30 W
3W
3.3 W
TYPICAL RDS(on) = 8
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 1: Package
TO-92 (Ammopack)
3
1
DPAK
3
2
1
IPAK
2
3
2
1
SOT-223
Figure 2: Internal Schematic Diagram
APPLICATIONS
LOW POWER BATTERY CHARGERS
SWITH MODE LOW POWER
SUPPLIES(SMPS)
LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
STD1NK60T4
STD1NK60-1
STQ1HNK60R
STQ1HNK60R-AP
STN1HNK60
Marking
D1NK60
D1NK60
1HNK60R
1HNK60R
N1HNK60
February 2006
Package
DPAK
IPAK
TO-92
TO-92
SOT-223
Packaging
TAPE & REEL
TUBE
BULK
AMMOPAK
TAPE & REEL
Rev. 3
1/15


STMicroelectronics Electronic Components Datasheet

N1HNK60 Datasheet

STN1HNK60

No Preview Available !

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 1.0A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
DPAK / IPAK
1.0
0.63
4
30
0.24
Value
TO-92
600
600
± 30
0.4
0.25
1.6
3
0.025
3
-55 to 150
SOT-223
0.4
0.25
1.6
3.3
0.025
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthj-lead Thermal Resistance Junction-lead Max
Tl Maximum Lead Temperature For Soldering
Purpose
(#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec
DPAK/IPAK
4.16
100
--
275
TO-92
SOT-223
-- --
120 37.87 (#)
40 --
260
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
1
25
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
Unit
°C/W
°C/W
°C/W
°C
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
600
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.25 3
3.7
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
8 8.5
Unit
V
µA
µA
nA
V
2/15


Part Number N1HNK60
Description STN1HNK60
Maker STMicroelectronics
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N1HNK60 Datasheet PDF






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