N1HNK60 Datasheet | STMicroelectronics

Features TYPE VDSS RDS(on) Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 600 V 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A 0.4 A 30 W 30 W 3W 3.3 W - TYPICAL RDS(on) = 8 Ω - EXTREMELY HIGH dv/dt CAPABILITY - ESD IMPROVED CAPABILITY - 100% AVALANCHE TESTED - NEW HIGH VOLTAGE BENCHMARK - GATE CHARGE MINIMIZED DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Figure 1: Package TO-92 (Ammopack) 3 1 DPAK 3 2 1 IPAK 3 2 1 SOT-223 Figure 2: Internal Schematic Diagram APPLICATIONS - LOW POWER BATTERY CHARGERS - SWITH MODE LOW POWER SUPPLIES(SMPS) - LOW POWER, BALLAST, CFL (PACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number STD1NK60T4 STD1NK60-1 STQ1HNK60R STQ1HNK60R-AP STN1HNK60 Marking D1NK60 D1NK60 1HNK60R 1HNK60R N1HNK60 February 2006 Package DPAK IPAK TO-92...