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N83003 - NPN power transistor

Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Features

  • High voltage capability.
  • Very high switching speed.

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Other Datasheets by STMicroelectronics

    Full PDF Text Transcription

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    STN83003 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Very high switching speed Application ■ Electronics ballasts for fluorescent lighting Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor. 4 3 2 1 SOT-223 I Figure 1. Internal schematic diagram Table 1.
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