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NAND04GA3C2A - (NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory

Description

7 Memory array organization

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Features

  • High density multi-level Cell (MLC) NAND Flash memories:.
  • Up to 128 Mbit spare area.
  • Cost effective solutions for mass storage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features ■ High density multi-level Cell (MLC) NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications NAND interface – x8 bus width – Multiplexed Address/ Data Supply voltages – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations. – VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O buffers. Page size: (2048 + 64 spare) Bytes Block size: (256K + 8K spare) Bytes Page Read/Program – Random access: 60µs (max) – Sequential access: 60ns(min) – Page Program Operation time: 800µs (typ) Cache Read mode – Internal Cache Register to improve the read throughput Fast Block Erase – Block erase time: 1.
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