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NAND04GW3C2A - (NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory

Download the NAND04GW3C2A datasheet PDF. This datasheet also covers the NAND04GA3C2A variant, as both devices belong to the same (nand04ga3c2a / nand04gw3c2a) multi-level nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

7 Memory array organization

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Features

  • High density multi-level Cell (MLC) NAND Flash memories:.
  • Up to 128 Mbit spare area.
  • Cost effective solutions for mass storage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NAND04GA3C2A_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
NAND04GW3B2A NAND Flash Memories
NAND04GW3B2B NAND Flash Memories
NAND04G-B (NAND0xG-B) NAND Flash Memory
NAND04GA3C2A (NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory
NAND01G-B (NAND0xG-B) NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features ■ High density multi-level Cell (MLC) NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications NAND interface – x8 bus width – Multiplexed Address/ Data Supply voltages – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations. – VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O buffers. Page size: (2048 + 64 spare) Bytes Block size: (256K + 8K spare) Bytes Page Read/Program – Random access: 60µs (max) – Sequential access: 60ns(min) – Page Program Operation time: 800µs (typ) Cache Read mode – Internal Cache Register to improve the read throughput Fast Block Erase – Block erase time: 1.
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