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STMicroelectronics Electronic Components Datasheet

P0109DA Datasheet

0.8A 400V high immunity sensitive SCR thyristor

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P0109DA
Datasheet
0.8 A 400 V high immunity sensitive SCR thyristor in TO-92
A
G
K
TO-92
G KA
Product status link
P0109DA
Product summary
IT(RMS)
0.8 A
VDRM/VRRM
400 V
IGT 1 µA
Tjmax.
125 °C
Features
• On-state rms current, IT(RMS) 0.8 A
• 125 °C max. Tj
• Ultra low 1 µA gate current
• Repetitive peak off-state voltage, VDRM/VRRM 400 V
ECOPACK2 compliant
Applications
• Gate driver for large Thyristors
• Overvoltage crowbar protection
• Ground fault circuit interrupters
• Arc fault circuit interrupter
• Standby mode power supplies
• Residual current detector
Description
Thanks to highly sensitive triggering levels, the 0.8 A P0109DA SCR thyristor is
suitable for all applications where available gate current is limited.
This device offers a high blocking voltage of 400 V, ideal for applications like
interrupters circuits.
The P0109DA is available in through-hole TO-92 package.
DS13154 - Rev 1 - January 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

P0109DA Datasheet

0.8A 400V high immunity sensitive SCR thyristor

No Preview Available !

P0109DA
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
Parameters
IT(RMS)
On-state RMS current (180° conduction angle)
IT(AV)
Average on-state current (180° conduction angle)
ITSM
Non repetitive surge peak on-state current,
Tj initial = 25 °C
I2t I2t value for fusing
Critical rate of rise of on-state current
dl/dt
IG = 2 x IGT , tr ≤ 100 ns
VDRM / VRRM Repetitive peak off-state voltage
IGM Peak gate current
PG(AV)
Tstg
Average gate power dissipation
Storage junction temperature range
Tj Operating junction temperature range
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
TL = 55 °C
Tj = 25 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Value
0.8
0.5
8
7
0.24
Unit
A
A
A
A2s
50 A/µs
400
1
0.1
-40 to +150
-40 to +125
V
A
W
°C
°C
Symbol
IGT
VGT
VGD
VRG
IH
IL
dV/dt
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Parameters
Value Unit
VD = 12 V, RL = 33 Ω
Max.
Max.
1
0.8
µA
V
VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ, Tj = 125 °C
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1.2 IGT, RGK = 1 kΩ
VD = 67 % VDRM, RGK = 1 kΩ, Tj = 125 °C
Min. 0.1
V
Min. 8
Max. 5
mA
Max. 6
mA
Min. 75 V/µs
Symbol
VT
VTO
Rd
IDRM
IRRM
Table 3. Static electrical characteristics
Test conditions
ITM = 1.6 A, tp = 380 µs
Threshold on-state voltage
Dynamic resistance
VD = VDRM
VR = VRRM
Tj
25 °C
125 °C
125 °C
25 °C
125 °C
Value Unit
Max. 1.95 V
Max. 0.95 V
Max. 600 mΩ
Max.
1
0.1
µA
mA
DS13154 - Rev 1
page 2/9


Part Number P0109DA
Description 0.8A 400V high immunity sensitive SCR thyristor
Maker STMicroelectronics
Total Page 9 Pages
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