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STMicroelectronics Electronic Components Datasheet

P11NB40FP Datasheet

STP11NB40FP

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STP11NB40
® STP11NB40FP
N - CHANNEL 400V - 0.48- 10.7A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
R DS( on)
ID
ST P11NB4 0
400 V
ST P11NB4 0FP 400 V
<0 .55
<0 .55
10 .7 A
6.0 A
s TYPICAL RDS(on) = 0.48
s EXTREMELY HIGH dV/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb ol
Parameter
V a l ue
Un it
ST P11NB4 0 STP11NB 40F P
V DS
V DGR
VGS
ID
ID
IDM ()
Pto t
Dr ai n-sour ce Voltage (VGS =0 )
Drain- gate Volt age (RGS =2 0 k)
G ate-so urc e Vo ltage
Dra in Curre nt (co ntinuous) at Tc =2 5 oC
Dra in Curre nt (co ntinuous) at Tc =1 00 oC6
Drain Curren t (pu lsed)
T ota l Dissipation at Tc =2 5 oC
Dera ting Factor
10. 7
.7
42. 8
125
1.0
400
40 0
± 30
6. 0
3.8
4 2. 8
40
0.32
V
V
V
A
A
A
W
W /o C
dv /dt (1) Peak Dio de Rec overy volt age slop e
4.5 4.5 V/ns
VISO I nsu lat ion W ithst and Voltage (DC)
Tst g Stor age Tempe rat ure
Tj Max. Operating Junc tion Tempe rature
() Pulse width limited by safe operating area
20 00
-65 to 150
1 50
( 1)I SD 10.7A, di/dt 200 A/µs, VDD V(BR)DSS,T j TJMAX
V
oC
oC
September 1998
1/9
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STMicroelectronics Electronic Components Datasheet

P11NB40FP Datasheet

STP11NB40FP

No Preview Available !

STP11NB40/FP
THERMAL DATA
Rthj-case
R th j -a mb
R t h c - s i nk
Tl
Thermal Resistance Junction-case
Max
The rmal Res istance Junc tion- ambien t
Max
Ther mal Resistanc e Case-sink
Typ
Maximum Lead Tem per ature For Sold ering Purpose
TO-220
1.0
TO-220FP
3.12
62 .5
0. 5
30 0
oC/W
o C/ W
o C/ W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
Para met er
Avalan che Current , Repet itive or Not-Repet itive
(pulse width limited by Tj ma x)
Single Pu lse Ava lanche En ergy
(startin g Tj =2 5 oC, ID =I AR,V DD =5 0 V)
Max Valu e
10. 7
530
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase =2 5 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
IDS S
IGS S
Pa ram et e r
Test Con dit ions
Dr ain- source
Break down Voltage
ID =2 50 µ AV GS =0
Zero G ate Voltage
VDS =M ax Rating
Dr ain Current (VGS =0 ) VDS = Max Rating
Tc =1 25 oC
Gate-body Le akage
Cur ren t (VDS =0 )
VGS = ± 30 V
M i n.
400
T yp.
Max.
U n it
V
1
50
± 10 0
µA
µA
nA
ON ()
Symbo l
VGS (th)
R D S( on)
ID(o n)
Pa ram et e r
Test Con dit ions
Gate Threshold
Vo l t ag e
VDS =V GS ID = 250 µA
Stat ic Drai n-source O n VGS =1 0V ID = 5.3 A
Res istanc e
On Stat e Drain Cu rrent VDS >I D(o n) xR DS(on )max
VGS =1 0 V
Min. T yp.
345
Max.
U n it
V
0.48 0.5 5
10. 7
A
DYNAMIC
Symbo l
Pa ram et e r
gfs ()F orward
Trans cond uctanc e
Cis s
Cos s
Crs s
Input Cap acitan ce
Output Ca pac itance
Revers e T ransfer
Capac it ance
Test Con dit ions
VDS >I D(o n) xR DS(on )ma x ID =5 .3 A
M i n.
5
T yp.
6.5
Max.
U n it
S
VDS =2 5 V f = 1 MHz VGS = 0
12 50
21 0
22
1 625
284
30
pF
pF
pF
2/9


Part Number P11NB40FP
Description STP11NB40FP
Maker STMicroelectronics
Total Page 9 Pages
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