P11NM50N Overview
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
P11NM50N Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance