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P11NM80 Datasheet N-CHANNEL Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800V - 0.

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General Description

The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance.

The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Applications ■ Switching application TO-247 3 1 D²PAK 3 2 1 TO-220 3 2 1 TO-220FP Internal schematic diagram Order codes Part number STB11NM80 STF11NM80 STP11NM80 STW11NM80 Marking B11NM80 F11NM80 P11NM80 W11NM80 Package D²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube July 2006 Rev 8 1/17 www.st.com 17 Contents Contents STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 1 Electrical ratings .

Key Features

  • Type VDSS RDS(on) RDS(on).
  • Qg STB11NM80 800V < 0.40Ω 14Ω.
  • nC STF11NM80 800V < 0.40Ω 14Ω.
  • nC STP11NM80 800V < 0.40Ω 14Ω.
  • nC STW11NM80 800V < 0.40Ω 14Ω.
  • nC ID 11A 11A 11A 11A.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Best RDS(on).
  • Qg in the industry.

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