900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

P120NF Datasheet

STP120NF

No Preview Available !

www.DataSheet4U.com
STP120NF04
N-CHANNEL 40V - 0.0047- 120A TO-220
STripFET™II MOSFET
Table 1: General Features
TYPE
VDSS RDS(on) ID (1) Pw
STP120NF04 40 V < 0.0050120 A 300 W
s TYPICAL RDS(on) = 0.0047
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
Figure 1: Package
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
3
2
1
TO-220
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Part Number
STP120NF04
Marking
P120NF04
Package
TO-220
Packaging
TUBE
February 2005
Rev. 1
1/11


STMicroelectronics Electronic Components Datasheet

P120NF Datasheet

STP120NF

No Preview Available !

STP120NF04
www.DataSheet4U.com
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID (#)
Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 120A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-pcb Thermal Resistance Junction-pcb Max
Rthj-amb Thermal Resistance Junction-ambient (Free air) Max
Tl Maximum Lead Temperature For Soldering Purpose
Value
40
40
± 20
120
120
480
300
2
6
1.2
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
0.5
See Curve on page 6
62.5
300
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
40
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating,
TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.8
4.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 50 A
0.0047 0.0050
Unit
V
µA
µA
nA
V
Table 6: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer
Capacitance
Test Conditions
VDS > =15 V , ID =50 A
VDS = 25 V, f = 1 MHz,
VGS = 0
Min.
Typ.
150
5100
1300
160
Max.
Unit
S
pF
pF
pF
2/11


Part Number P120NF
Description STP120NF
Maker STMicroelectronics
Total Page 11 Pages
PDF Download

P120NF Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 P120NF STP120NF
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy