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STMicroelectronics Electronic Components Datasheet

P1806 Datasheet

STP1806

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STP1806
WN-CHANNEL 60V - 0.015 - 50A TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STP1806
60 V < 0.018 W
WTYPICAL RDS(on) = 0.015
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
ID
50 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STP1806
MARKING
P1806
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
œIDM( )
Ptot
Drain-source Voltage (VGS = 0)
WDrain-gate Voltage (RGS = 20 k )
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
œ)( Pulse width limited by safe operating area.
November 2004
PACKAGE
TO-220
PACKAGING
TUBE
Value
60
60
± 20
50
35
200
110
0.73
7
350
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ˆ50A, di/dt ˆ400A/µs, VDD ˆ V(BR)DSS, Tj ˆ TJMAX
(2) Starting Tj = 25 oC, ID = 25A, VDD = 30V
Rev.0.1
1/9


STMicroelectronics Electronic Components Datasheet

P1806 Datasheet

STP1806

No Preview Available !

STP1806
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.36
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 27.5 A
Min.
2
Typ.
3
0.015
Max.
4
0.018
Unit
V
W
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 27.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
18
1530
300
105
Max.
Unit
S
pF
pF
pF
2/9


Part Number P1806
Description STP1806
Maker ST Microelectronics
Total Page 9 Pages
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