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P20NM60FP - N-CHANNEL POWER MOSFET

Download the P20NM60FP datasheet PDF. This datasheet also covers the P20NM60 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Key Features

  • TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s Figure 1: Package RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A 20 A 20 A TO-220 TO-220FP VDSS 600 V 600 V 600 V 600 V 600 V 3 1 2 3 1 2 s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P20NM60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s Figure 1: Package RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A 20 A 20 A TO-220 TO-220FP VDSS 600 V 600 V 600 V 600 V 600 V 3 1 2 3 1 2 s TYPICAL RDS(on) = 0.25 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 2 1 3 1 TO-247 I²PAK 3 12 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.