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P20NM60FP - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the P20NM60FP, a member of the P20NM60 N-CHANNEL POWER MOSFET family.

Datasheet Summary

Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Features

  • TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s Figure 1: Package RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A 20 A 20 A TO-220 TO-220FP VDSS 600 V 600 V 600 V 600 V 600 V 3 1 2 3 1 2 s.

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Datasheet preview – P20NM60FP

Datasheet Details

Part number P20NM60FP
Manufacturer STMicroelectronics
File Size 437.01 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet P20NM60FP Datasheet
Additional preview pages of the P20NM60FP datasheet.

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Full PDF Text Transcription

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STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s Figure 1: Package RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A 20 A 20 A TO-220 TO-220FP VDSS 600 V 600 V 600 V 600 V 600 V 3 1 2 3 1 2 s TYPICAL RDS(on) = 0.25 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 2 1 3 1 TO-247 I²PAK 3 12 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
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