P32N05L
P32N05L is STP32N05L manufactured by STMicroelectronics.
STP32N05L STP32N05LFI
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP32N05L STP32N05LFI .. s s s s s s s s s
V DSS 50 V 50 V
R DS( on) < 0.055 Ω < 0.055 Ω
ID 32 A 19 A
TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE HIGH CURRENT CAPABILITY LOGIC LEVEL PATIBLE INPUT o 175 C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 1 2 1 2
TO-220
ISOWATT220
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP32N05L VD S V DG R V GS ID ID ID M(
- ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o
Value STP32N05LFI 50 50 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 40 0.27 2000
Unit
V V V A A A W W/o C V o o
(- ) Pulse width limited by safe operating area
November 1996
1/10
STP32N05L/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.43 62.5 0.5 300 ISOWATT220 3.75 o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
..
Symbol IA R E AS E AR IA R
Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c =...
