Download P4NC50 Datasheet PDF
STMicroelectronics
P4NC50
DESCRIPTION The Power MESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES 3 2 1 TO-220 3 2 1 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (- )Pulse...