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STMicroelectronics Electronic Components Datasheet

P4NC50 Datasheet

STP4NC50

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STP4NC50
STP4NC50FP
N-CHANNEL 500V - 2.2- 3.5A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP4NC50
500 V < 2.7
3.5 A
STP4NC50FP
500 V < 2.7
3.5 A
s TYPICAL RDS(on) = 2.2
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
October 2000
Value
Unit
STP4NC50 STP4NC50FP
500 V
500 V
±30 V
3.5
3.5(*)
A
2.2
2.2(*)
A
14
14(*)
A
80 40 W
0.64
0.32 W/°C
3.5 V/ns
-
2000
V
–65 to 150
°C
150
(1)ISD 3.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*).Limited only by maximum temperature allowed
°C
1/9


STMicroelectronics Electronic Components Datasheet

P4NC50 Datasheet

STP4NC50

No Preview Available !

STP4NC50/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.56
62.5
0.5
300
TO-220FP
3.12
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
3.5
210
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
2.2
Max.
4
2.7
Unit
V
3.5 A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
2.7
315
52
7.7
Max.
Unit
S
pF
pF
pF
2/9


Part Number P4NC50
Description STP4NC50
Maker STMicroelectronics
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P4NC50 Datasheet PDF






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