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P5NA80 - STP5NA80

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Full PDF Text Transcription for P5NA80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for P5NA80. For precise diagrams, and layout, please refer to the original PDF.

( DataSheet : www.DataSheet4U.com ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4 Ω <...

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TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A s TYPICAL RDS(on) = 1.8 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Brand Logo Part Number Description Manufacturer
ST Microelectronics Logo P5NA80FI STSTP5NA80FI ST Microelectronics

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