P75NS04Z - STP75NS04Z

STMicroelectronics

General Description

This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout.

Key Features

Type STP75NS04Z VDSS Clamped RDS(on) < 11mΩ ID 80A.
Low capacitance and gate charge.
100% avalanche tested.
175°C maximum junction temperature.

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P75NS04Z stp75ns04z by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	P75NS04Z
Manufacturer	STMicroelectronics
File Size	209.39 KB
Description	STP75NS04Z
Datasheet	P75NS04Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay™ III Power MOSFET General features Type STP75NS04Z VDSS Clamped RDS(on) < 11mΩ ID 80A ■ Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature Description This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of a new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encoured in power tools. Any other application requiring extra ruggedness is also recommended.