Datasheet Details
| Part number | P7NC70ZF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 457.46 KB |
| Description | STP7NC70ZF |
| Download | P7NC70ZF Download (PDF) |
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| Part number | P7NC70ZF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 457.46 KB |
| Description | STP7NC70ZF |
| Download | P7NC70ZF Download (PDF) |
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|
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The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
www.DataSheet4U.com STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP7NC70Z/FP STB7NC70Z/-1 s s VDSS 700V 700V RDS(on) < 1.38Ω < 1.38Ω ID 6A 6A 1 3 s s s TYPICAL RDS(on) = 1.
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