900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

P85NF55 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STB85NF55T4, STP85NF55
Datasheet
Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II
Power MOSFETs in D²PAK and TO-220 packages
TAB
TAB
3
1
D2PAK
TO-220
1 23
D(2, TAB)
Features
Type
STB85NF55T4
STP85NF55
VDS
55 V
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
RDS(on) max.
8.0 mΩ
ID
80 A
G(1)
S(3)
Applications
• Switching applications
AM01475v1_noZen
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique
STripFET process, which is specifically designed to minimize input capacitance and
gate charge. This renders the devices suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate charge driving requirements.
Product status link
STB85NF55T4
STP85NF55
Product summary
Order code
STB85NF55T4
Marking
B85NF55
Package
D²PAK
Packing
Tape and reel
Order code
STP85NF55
Marking
P85NF55
Package
TO-220
Packing
Tube
DS2569 - Rev 12 - January 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

P85NF55 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STB85NF55T4, STP85NF55
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID(1)
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Derating factor
EAS(3)
Single-pulse avalanche energy
dv/dt(4)
Peak diode recovery voltage slope
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V
4. ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
55
±20
80
80
320
300
2.0
980
10
-55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
V/ns
°C
Value
0.5
62.5
Unit
°C/W
°C/W
DS2569 - Rev 12
page 2/18


Part Number P85NF55
Description N-CHANNEL POWER MOSFET
Maker STMicroelectronics
PDF Download

P85NF55 Datasheet PDF






Similar Datasheet

1 P85NF55 N-CHANNEL POWER MOSFET
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy