STB85NF55T4, STP85NF55
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID(1)
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Derating factor
EAS(3)
Single-pulse avalanche energy
dv/dt(4)
Peak diode recovery voltage slope
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V
4. ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
55
±20
80
80
320
300
2.0
980
10
-55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
V/ns
°C
Value
0.5
62.5
Unit
°C/W
°C/W
DS2569 - Rev 12
page 2/18
