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STMicroelectronics Electronic Components Datasheet

P8NC50FP Datasheet

STP8NC50FP

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STP8NC50 - STP8NC50FP
STB8NC50-1
N-CHANNEL 500V - 0.7- 8A TO-220/TO-220FP/I2PAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP(B)8NC50(-1) 500 V < 0.85
8A
STP8NC50FP
500 V < 0.85
8A
s TYPICAL RDS(on) = 0.7
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
TO-220
3
2
1
TO-220FP
123
I²PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
December 2000
Value
STP(B)8NC50(-1) STP8NC50FP
500
500
±30
8 8(*)
5.4 5.4(*)
32 32(*)
135 40
1.075
0.32
3
- 2000
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
(1)ISD 8A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
1/10


STMicroelectronics Electronic Components Datasheet

P8NC50FP Datasheet

STP8NC50FP

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www.DataSheet4U.com
STP8NC50/FP/STB8NC50-1
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220/I2PAK
0.93
62.5
0.5
300
TO-220FP
3.12
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
8
600
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.7
Max.
4
0.85
Unit
V
8A
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 4A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
7.5
1050
165
25
Max.
Unit
S
pF
pF
pF
2/10


Part Number P8NC50FP
Description STP8NC50FP
Maker STMicroelectronics
Total Page 10 Pages
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