900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

P8NC60FP Datasheet

STP8NC60FP

No Preview Available !

STP8NC60
STP8NC60FP
N-CHANNEL 600V - 0.85- 7A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP8NC60
www.DataSheet4U.cSoTmP8NC60FP
600 V
600 V
< 1.0
< 1.0
7A
7A
s TYPICAL RDS(on) = 0.85
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
July 2001
Value
STP8NC60 STP8NC60FP
600
600
±30
7 7 (*)
4.4 4.4 (*)
28 28 (*)
125 30
1.0 0.24
3.5
- 2500
–65 to 150
150
(1)ISD 7A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9


STMicroelectronics Electronic Components Datasheet

P8NC60FP Datasheet

STP8NC60FP

No Preview Available !

STP8NC60/STP8NC60FP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1
62.5
300
TO-220FP
4.125
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
www.DataSheet4U.com EAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7
300
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.5 A
Min.
2
Typ.
3
0.85
Max.
4
1.0
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
6.7
1060
145
20
Max.
Unit
S
pF
pF
pF
2/9


Part Number P8NC60FP
Description STP8NC60FP
Maker STMicroelectronics
Total Page 9 Pages
PDF Download

P8NC60FP Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 P8NC60FP STP8NC60FP
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy