P8NM50
features
Type
VDSS (@Tjmax)
RDS(on)
STP8NM50 t(s)STP8NM50FP
550V 550V
<0.8Ω <0.8Ω
8A 8A (1) c1. Limited only by maximum temperature allowed du- 100% avalanche tested ro- High dv/dt and avalanche capabilities P- Low gate input resistance te- Low input capacitance and gate charge sole Description b The MDmesh™ is a new revolutionary Power
- OMOSFET technology that associates the multiple )drain process with the pany’s Power MESH™ t(shorizontal layout. The resulting product has an outstanding low on-resistance, impressively high ucdv/dt and excellent avalanche characteristics. The dadoption of the pany’s proprietary strip rotechnique yields overall dynamic performance Pthat is significantly better than that of similar petition’s products. lete Applications Obso- Switching application
3 2 1
TO-220
3 2 1
TO-220FP
Internal schematic diagram
Order codes
Part number STP8NM50 STP8NM50FP
Marking P8NM50 P8NM50FP
Package TO-220 TO-220FP
Packaging Tube Tube
October 2006
Rev...
