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PD54003S-E - RF POWER transistor

Download the PD54003S-E datasheet PDF. This datasheet also covers the PD54003-E variant, as both devices belong to the same rf power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 7V in common source mode at frequencies of up to 1GHz.

Features

  • Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MHz New RF plastic package PowerSO-10RF (formed lead).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD54003-E_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
PD54003-E RF POWER transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD54003-E PD54003S-E RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MHz New RF plastic package PowerSO-10RF (formed lead) Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios.
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