Datasheet4U Logo Datasheet4U.com

PD57030-E - RF POWER transistor

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies up to 1 GHz.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 30 W with 14dB gain @ 945 MHz / 28 V.
  • New RF plastic package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PD570BA N-Channel MOSFET UNIKC
PD5710 User Manual Escon
PD5710 Installation and service manual Escon
PD5715 User Manual Escon
PD5715 Installation and service manual Escon

Other Datasheets by STMicroelectronics

Part Number Description
PD57030 RF POWER TRANSISTORS
PD57030S RF POWER TRANSISTORS
PD57002-E RF POWER transistor
PD57006-E RF POWER transistor
PD57006S-E RF POWER transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications.
Published: |