PD57030-E
Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor.
Key Features
- Excellent thermal stability
- POUT = 30 W with 14dB gain @ 945 MHz / 28 V
- New RF plastic package
- Part: PD57030-E
- Description: RF POWER transistor
- Category: Transistor
- Manufacturer: STMicroelectronics
- Size: 474.18 KB