RF2L16080CF2 - RF power LDMOS transistor

Product Overview

STMicroelectronics

Datasheet Details

Part number	RF2L16080CF2
Manufacturer	STMicroelectronics
File Size	1.87 MB
Description	RF power LDMOS transistor
Datasheet	RF2L16080CF2 Datasheet
Additional preview pages of the RF2L16080CF2 datasheet.

Product details

Description

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally input matched for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the European Directive 2002/95/EC.

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Published: Mar 14, 2023 |