logo

RF2L24280CB4 Datasheet, STMicroelectronics

RF2L24280CB4 Datasheet, STMicroelectronics

RF2L24280CB4

datasheet Download (Size : 1.12MB)

RF2L24280CB4 Datasheet

RF2L24280CB4 transistor

rf power ldmos transistor.

RF2L24280CB4

datasheet Download (Size : 1.12MB)

RF2L24280CB4 Datasheet

RF2L24280CB4 Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60%
* High efficiency and linear gain operations
* Integrated ESD.

RF2L24280CB4 Application


* Industrial, scientific and medical Description The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designe.

RF2L24280CB4 Description

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation. Product s.

Image gallery

RF2L24280CB4 Page 1 RF2L24280CB4 Page 2 RF2L24280CB4 Page 3

TAGS

RF2L24280CB4
Power
LDMOS
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

Related datasheet

RF2L27015CG2

RF2L27025CG2

RF2L15200CB4

RF2L16080CF2

RF2L16180CB4

RF2L16180CF2

RF2L36040CF2

RF2L36075CF2

RF2L42008CG2

RF2L6S

RF2001

RF2001NS2D

RF2001NS2DFH

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts