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RF2L24280CB4 Datasheet

Manufacturer: STMicroelectronics
RF2L24280CB4 datasheet preview

RF2L24280CB4 Details

Part number RF2L24280CB4
Datasheet RF2L24280CB4-STMicroelectronics.pdf
File Size 1.12 MB
Manufacturer STMicroelectronics
Description RF Power LDMOS transistor
RF2L24280CB4 page 2 RF2L24280CB4 page 3

RF2L24280CB4 Overview

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation. RF2L24280CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table.

RF2L24280CB4 Key Features

  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C
  • Excellent thermal stability, low HCI drift
  • In pliance with the European directive 2002/95/EC

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