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RF2L24280CB4 Datasheet RF Power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz.

It is qualified up to 32 V operation.

Product status link RF2L24280CB4 Product summary Order code RF2L24280CB4 Marking 2L24280 Package D4E Packing Tray Base/bulk quantity 20/100 DS13569 - Rev 3 - September 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF2L24280CB4 Datasheet 280 W, 28 V, 2.4 to 2.5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

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