RF2L24280CB4 - RF Power LDMOS transistor

Datasheet Summary

Description

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz.

It is qualified up to 32 V operation.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched pair transistors in push-pull configuration.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the European directive 2002/95/EC.

STMicroelectronics

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Datasheet Details

Part number	RF2L24280CB4
Manufacturer	STMicroelectronics
File Size	1.12 MB
Description	RF Power LDMOS transistor
Datasheet	RF2L24280CB4 Datasheet
Additional preview pages of the RF2L24280CB4 datasheet.

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Full PDF Text Transcription

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RF2L24280CB4 Datasheet 280 W, 28 V, 2.4 to 2.

Published: Mar 19, 2023 |