* Order code RF3L05250CB4 Frequency 650 MHz VDD 28 V POUT 250 W Gain 18 dB Efficiency 62%
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* In complian
RF3L05250CB4 Datasheet (485.76 KB)
RF3L05250CB4
485.76 KB
Rf power ldmos transistor.
RF3L05250CB4 Datasheet 250 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain.
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