Datasheet4U Logo Datasheet4U.com

RF4L10700CB4 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

📥 Download Datasheet

General Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range.

It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation.

It is qualified up to 40 V operation.

Overview

RF4L10700CB4 Datasheet 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Optimized for Doherty.

More Datasheets from STMicroelectronics

Part Number Description
RF4L15400CB4 RF Power LDMOS transistor