RF4L10700CB4 Datasheet - STMicroelectronics

RF power LDMOS transistor

RF4L10700CB4 Features

* Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally matched pair transistors in push-pull configuration

* Large positive and negative

RF4L10700CB4 General Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation. It is qualified up to 40 V operation. .

RF4L10700CB4 Datasheet (521.01 KB)

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Datasheet Details

Part number:

RF4L10700CB4

Manufacturer:

STMicroelectronics ↗

File Size:

521.01 KB

Description:

Rf power ldmos transistor.
RF4L10700CB4 Datasheet 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B .

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RF4L10700CB4 Features

RF4L10700CB4 General Description

Datasheet Details

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