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RF4L10700CB4 - RF power LDMOS transistor

Datasheet Summary

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range.

It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation.

It is qualified up to 40 V operation.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Optimized for Doherty.

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Datasheet Details

Part number RF4L10700CB4
Manufacturer STMicroelectronics
File Size 521.01 KB
Description RF power LDMOS transistor
Datasheet download datasheet RF4L10700CB4 Datasheet
Additional preview pages of the RF4L10700CB4 datasheet.

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RF4L10700CB4 Datasheet 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Optimized for Doherty applications • Excellent thermal stability, low HCI drift • In compliance with the European directive 2002/95/EC Applications • ISM • RF energy Description The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, desi
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