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RF4L10700CB4 Datasheet

Manufacturer: STMicroelectronics
RF4L10700CB4 datasheet preview

RF4L10700CB4 Details

Part number RF4L10700CB4
Datasheet RF4L10700CB4-STMicroelectronics.pdf
File Size 521.01 KB
Manufacturer STMicroelectronics
Description RF power LDMOS transistor
RF4L10700CB4 page 2 RF4L10700CB4 page 3

RF4L10700CB4 Overview

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation. It is qualified up to 40 V operation.

RF4L10700CB4 Key Features

  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C
  • Optimized for Doherty

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