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RF5L0912750CB4
Datasheet
750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
1
2 5
4
3 D4E
Pin connection
Pin
Connection
1
Drain A
2
Drain B
3
Source (bottom side)
4
Gate B
5
Gate A
Features
Order code
Frequency
VDD
POUT Gain
Efficiency
RF5L0912750CB4
960 MHz
50 V 750 W 15 dB
53%
• High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C
operation • Excellent thermal stability, low HCI drift • In compliance with the European directive 2002/95/EC
Applications
• Avionics • Industrial, scientific and medical
Description
The RF5L0912750CB4 is a 750 W, 50 V high performance, internally matched LDMOS transisto