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RF5L0912750CB4 - RF power LDMOS transistor

General Description

The RF5L0912750CB4 is a 750 W, 50 V high performance, internally matched LDMOS transistor, designed for avionic applications in the frequency range from 960 to 1215 MHz.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L0912750CB4 960 MHz 50 V 750 W 15 dB 53%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF5L0912750CB4 Datasheet 750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF5L0912750CB4 960 MHz 50 V 750 W 15 dB 53% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European directive 2002/95/EC Applications • Avionics • Industrial, scientific and medical Description The RF5L0912750CB4 is a 750 W, 50 V high performance, internally matched LDMOS transisto