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RF5L1214750CB4 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

Overview: RF5L1214750CB4 Datasheet 750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

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General Description

The RF5L1214750CB4 is a 750 W, 50V high performance LDMOS FET, designed for L-Band radar and particle accelerator in the frequency range from 1300 to 1500 MHz.

Product status link RF5L1214750CB4 Product summary Order code RF5L1214750CB4 Marking 5L1214750 Package D4E Packing Tray Base/bulk quantity 20/100 DS13650 - Rev 2 - September 2021 For further information contact your local STMicroelectronics sales office.

www.st.com RF5L1214750CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L1214750CB4 1300 MHz 50 V 750 W 15 dB 53%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

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