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RF5L1214750CB4
Datasheet
750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
1
2 5
4
3 D4E
Pin connection
Pin
Connection
1
Drain A
2
Drain B
3
Source (bottom side)
4
Gate B
5
Gate A
Features
Order code
Frequency
VDD
POUT Gain
Efficiency
RF5L1214750CB4
1300 MHz
50 V 750 W 15 dB
53%
• High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C
operation • Excellent thermal stability, low HCI drift • In compliance with the European directive 2002/95/EC
Applications
• L-Band radar • From 1300 to 1500 MHz particle accelerator
Description
The RF5L1214750CB4 is a 750 W, 50V high performance LDMOS FET, designed fo
RF5L1214750CB4 Datasheet
