SCT020H120G3AG
Features
Order code SCT020H120G3AG
VDS 1200 V
RDS(on) typ. 18.5 mΩ
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
ID 100 A
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-ch G1DS2PS34567DTAB
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Product status link SCT020H120G3AG
Product summary
Order code
Marking
20H120G3AG
Package
H²PAK-7
Packing
Tape and...
