SCT070HU120G3AG - Automotive-grade silicon carbide Power MOSFET

Datasheet Summary

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

Order code SCT070HU120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency.

STMicroelectronics

📥 Download Datasheet

Datasheet Details

Part number	SCT070HU120G3AG
Manufacturer	STMicroelectronics
File Size	635.13 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT070HU120G3AG Datasheet
Additional preview pages of the SCT070HU120G3AG datasheet.

📁 Similar Datasheet

SCT009003-V01 - LCD MODULE (SINOCRYSTAL)
SCT009004-V01 - LCD MODULE (SINOCRYSTAL)
SCT009005-V01 - LCD MODULE (SINOCRYSTAL)
SCT013003-V01 - LCD MODULE (SINOCRYSTAL)
SCT018001-V01 - LCD MODULE (SINOCRYSTAL)
SCT01L60 - 1A Logic Level Triac (KODENSHI)
SCT024001-V02 - LCD Module (SINOCRYSTAL)
SCT024019-V02 - LCD MODULE (SINOCRYSTAL)
SCT024026-V01 - LCD MODULE (SINOCRYSTAL)
SCT028002-V03 - LCD MODULE (SINO CRYSTAL)

Other Datasheets by STMicroelectronics

SCT070H120G3AG - Automotive-grade silicon carbide Power MOSFET
SCT070W120G3-4AG - Automotive-grade silicon carbide Power MOSFET
SCT011H75G3AG - Automotive-grade silicon carbide Power MOSFET
SCT012H90G3AG - Automotive-grade silicon carbide Power MOSFET
SCT012W90G3AG - Automotive-grade silicon carbide Power MOSFET
SCT014HU65G3AG - Automotive-grade silicon carbide Power MOSFET
SCT015W120G3-4AG - Automotive-grade silicon carbide Power MOSFET
SCT018H65G3AG - Automotive-grade silicon carbide Power MOSFET

Full PDF Text Transcription

Click to expand full text

SCT070HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HU3PAK package TAB Gate (1) Driver source (2) 7 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Features Order code SCT070HU120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Published: Feb 18, 2023 |