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SCT30N120 Datasheet 1200V 45A Silicon carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT30N120 Datasheet Silicon carbide Power MOSFET 1200 V, 80 mΩ typ.

General Description

AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability.

Key Features

  • HiP247 3 2 1 D(2, TAB).
  • Very low RDS(on) over the entire temperature range.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Very fast and robust intrinsic body diode.
  • Low capacitance.

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