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SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET

Manufacturer: STMicroelectronics

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General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ.

Key Features

  • Order code SCTH100N65G2-7AG VDS 650 V RDS(on) max. 26 mΩ ID 95 A.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Source sensing pin for increased efficiency.

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