* Order code SCTH35N65G2V-7AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Source sensing pin for increased efficiency Applications
* Main inverter (
SCTH35N65G2V-7AG Datasheet (375.29 KB)
SCTH35N65G2V-7AG
375.29 KB
Automotive-grade silicon carbide power mosfet.
SCTH35N65G2V-7AG Datasheet Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
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