Datasheet4U Logo Datasheet4U.com

SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Key Features

  • Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Source sensing pin for increased efficiency.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SCT-013-000 Transformer XiDi Technology
SCT-013-000V Split core current transformer YHDC
SCT-013-005 Transformer YHDC
SCT-013-010 Transformer YHDC
SCT-013-015 Transformer YHDC

Other Datasheets by STMicroelectronics

Part Number Description
SCTH40N120G2V-7 Silicon carbide Power MOSFET
SCTH100N120G2-AG Automotive-grade silicon carbide Power MOSFET
SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET
SCTH35N65G2V-7 Silicon carbide Power MOSFET
SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Features Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.