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SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCTH40N120G2V7AG
Manufacturer	STMicroelectronics ↗
File Size	371.10 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTH40N120G2V7AG-STMicroelectronics.pdf

SCTH40N120G2V7AG Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

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Published: Apr 15, 2020 |