* Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Source sensing pin for increased efficiency Applications
* Main inverter
SCTH40N120G2V7AG Datasheet (371.10 KB)
SCTH40N120G2V7AG
371.10 KB
Automotive-grade silicon carbide power mosfet.
SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
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