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SCTH90N65G2V-7 Datasheet

Silicon carbide Power MOSFET

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SCTH90N65G2V-7
Datasheet
Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C)
in an H²PAK7 package
TAB
7
1
H2PAK-7
Drain (TAB)
Gate (1)
Driver
source (2)
Power
source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code
VDS
RDS(on) max.
SCTH90N65G2V-7
650 V
24 mΩ
• Very high operating junction temperature capability (TJ = 175 °C)
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitances
ID
116 A
Applications
• Switching applications
• Power supply for renewable energy systems
• High frequency DC-DC converters
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
Product status link
SCTH90N65G2V-7
Product summary
Order code
SCTH90N65G2V-7
Marking
SCT90N65
Package
H2PAK-7
Packing
Tape and reel
DS12084 - Rev 4 - July 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

SCTH90N65G2V-7 Datasheet

Silicon carbide Power MOSFET

No Preview Available !

SCTH90N65G2V-7
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
Gate-source voltage
VGS
Gate-source voltage (recommended operating values)
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Tstg Storage temperature range
TJ Operating junction temperature range
1. Pulse width is limited by safe operating area.
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
650
-10 to 22
-5 to 18
116
82
220
484
-55 to 175
Unit
V
V
A
A
W
°C
°C
Value
0.31
40
Unit
°C/W
°C/W
DS12084 - Rev 4
page 2/14


Part Number SCTH90N65G2V-7
Description Silicon carbide Power MOSFET
Maker STMicroelectronics
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SCTH90N65G2V-7 Datasheet PDF






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