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SCTH90N65G2V-7 - Silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Key Features

  • Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ.
  • Very high operating junction temperature capability (TJ = 175 °C).
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitances ID 116 A.

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SCTH90N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Features Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitances ID 116 A Applications • Switching applications • Power supply for renewable energy systems • High frequency DC-DC converters Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.