SCTWA70N120G2V Datasheet - STMicroelectronics

Silicon carbide Power MOSFET

* Order code VDS RDS(on) typ. ID SCTWA70N120G2V 1200 V 21 mΩ 91 A

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capability (TJ = 200 °C) Applications

* Switching mode po

SCTWA70N120G2V

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Silicon carbide power mosfet.

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