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SCTWA70N120G2V - Silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Key Features

  • Order code VDS RDS(on) typ. ID SCTWA70N120G2V 1200 V 21 mΩ 91 A.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C).

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SCTWA70N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package HiP247 long leads D(2, TAB) Features Order code VDS RDS(on) typ. ID SCTWA70N120G2V 1200 V 21 mΩ 91 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.