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SD1476 Datasheet

RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

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SD1476
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
. 55 - 88 MHz
. 32 VOLTS
. COMMON EMITTER
. GOLD METALLIZATION
. INTERNAL INPUT MATCHING
. CLASS AB PUSH PULL
. HIGH SATURATED POWER CAPABILITY
. DIFFUSED EMITTER BALLAST
RESISTORS
. DESIGNED FOR HIGH POWER LINEAR
OPERATION
. POUT = 240 W MIN. WITH 12.0 dB GAIN
2 x .437 x .450 2LFL (M165)
epoxy sealed
ORDER CODE
B RA ND IN G
SD1476
SD1476
PIN CONNECTION
DESCRIPTION
The SD1476 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band I television transmitters and trans-
posers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Device Current
PDISS
Power Dissipation
TJ
TSTG
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Base
3. Emitter
Value
70
40
4.0
25
430
+200
50 to +150
Unit
V
V
V
A
W
°C
°C
0.4 °C/W
1/8


STMicroelectronics Electronic Components Datasheet

SD1476 Datasheet

RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

No Preview Available !

SD1476
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVCER
BVCEO
BVEBO
ICEO
ICBO
hFE
IC = 50mA
IC = 50mA
IC = 100mA
IE = 20mA
VCE = 30V
VCB = 30V
VCE = 5V
IE = 0mA
RBE = 51
IB = 0mA
IC = 0mA
IE = 0mA
IE = 0mA
IC = 7A
Min.
70
68
40
4.0
10
Va l u e
Typ. Max.
——
——
——
——
— 10
— 10
— 50
Unit
V
V
V
V
mA
mA
DYNAMIC
S ymb o l
POUT* f = 88 MHz
GP f = 88 MHz
ηc f = 88 MHz
COB f = 1 MHz
Note: *1 dB Compression
Test Conditions
VCE = 32 V
VCE = 32 V
VCE = 32 V
VCB = 28 V
ICQ = 2 x 400mA
ICQ = 2 x 400mA
ICQ = 2 x 400mA
Value
Min. Typ. Max.
240 — —
12 — —
50 — —
— — 220
Unit
W
dB
%
pF
2/8


Part Number SD1476
Description RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
Maker ST Microelectronics
Total Page 8 Pages
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