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SD4600 Datasheet

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

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SD4600
RF & MICROWAVE TRANSISTORS
CELLULAR BASE STATION APPLICATIONS
..... GOLD METALLIZATION
860-960 MHz
26 VOLTS
EFFICIENCY 50% MIN.
POUT = 60 W MIN. WITH 7.5 dB GAIN
PRELIMINARY DATA
.438 x .450 2LFL (M173)
epoxy sealed
ORDER CODE
BRANDING
SD4600
SD4600
PIN CONNECTION
DESCRIPTION
The SD4600 is designed for 960MHz mobile base
stations in both analog and digital applications.
Including double input and output matching net-
works, the SD4600 features high impedances
allowing operation over the full 860 to 960 MHz
bandwidth.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
*Applies only to rated RF amplifier operation
November 1992
1. Collector
2. Base
3. Emitter
Value
60
28
3.5
8
146
+200
65 to +150
1.2
Unit
V
V
V
A
W
°C
°C
°C/W
1/4


STMicroelectronics Electronic Components Datasheet

SD4600 Datasheet

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

No Preview Available !

SD4600
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (Total Device)
S ymb o l
Test Conditions
BVCBO
BVEBO
BVCEO
ICEO
hFE
IC = 100mA
IE = 20mA
IC = 100mA
VCE = 25V
VCE = 5V
IC = 3A
Min.
60
3.5
28
25
Va l u e
Typ. Max.
——
——
——
— 30
— 80
Unit
V
V
V
mA
DYNAMIC (Total Device)
S ymb o l
POUT
ηc
GP
VSWR
f = 960MHz
f = 960MHz
f = 960MHz
f = 960MHz
Test Conditions
VCC = 26V
VCC = 26V
VCC = 26V
VCC = 26V
ICQ = .200A
ICQ = .200A
ICQ = .200A
Value
Min. Typ. Max.
60 65 —
50 58 —
7.5 8.0 —
5:1 — —
Unit
W
%
dB
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
POUT
ηC
FREQ = 960MHz
VCC = 26V
ICQ = 200mA
2/4


Part Number SD4600
Description RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS
Maker ST Microelectronics
Total Page 4 Pages
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