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SD4701 Datasheet

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

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SD4701
RF & MICROWAVE TRANSISTORS
CELLULAR BASE STATION APPLICATIONS
. DESIGNED FOR CLASS AB LINEAR
OPERATION
. COMMON EMITTER
. INTERNAL INPUT/OUTPUT MATCHING
. 26 VOLT, 960 MHz PERFORMANCE:
POUT = 45 W MIN.
. GAIN = 8.5 dB MIN.
COLLECTOR EFFICIENCY 50% MIN.
INHERENT RUGGEDNESS:
LOAD MISMATCH TOLERANCE OF
5:1 MIN. VSWR
3 dB OVERDRIVE CAPABILITY
.400 x .425 6LFL (M169)
epoxy sealed
ORDER CODE
B RA ND IN G
SD4701
SD4701
PIN CONNECTION
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
VCBO
VCEO
VCER
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
May 1993
1. Collector
2. Base
3. Emitter
Value
60
30
40
3.5
10
145
+200
65 to +150
1.2
Unit
V
V
V
V
A
W
°C
°C
°C/W
1/6


STMicroelectronics Electronic Components Datasheet

SD4701 Datasheet

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

No Preview Available !

SD4701
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVCEO
BVCER
BVEBO
ICER
hFE
IC = 60 mA
IC = 60 mA
IC = 60 mA
IE = 10 mA
VCE = 26 V
VCE = 10 V
IE = 0 mA
IB = 0 mA
RBE = 75
IC = 0 mA
RBE = 75
IC = 1 A
Val ue
Min. Typ. Max.
60 — —
30 — —
40 — —
3.5 — —
— — 15
15 — 100
Unit
V
V
V
V
mA
DYNAMIC
S ymb o l
Test Conditions
Val ue
Unit
Min. Typ. Max.
COB f = 1 MHz VCB = 26 V
For Information Only - This Device is Collector Matched
PIN f = 960 MHz VCE = 26 V ICQ = 200 mA POUT = 45 W
— 55 —
— 5 6.3
pF
W
POUT f = 960 MHz VCE = 26 V ICQ = 200 mA PIN = 6.3 W
45 55 — W
GP f = 960 MHz VCE = 26 V ICQ = 200 mA POUT = 45 W
ηc f = 960 MHz VCE = 26 V ICQ = 200 mA POUT = 45 W
8.5 9.5 —
50 55 —
dB
%
Load f = 960 MHz VCE = 26 V ICQ = 200 mA POUT = 45 W
Mismatch VSWR = 5:1 MIN. @ All Phase Angles
No Degradation in
Device Performance
OVD
f = 960 MHz VCE = 26 V ICQ = 200 mA
Set POUT = 45 W; Increase PIN 3dB
No Degradation in
Device Performance
*IMD3
VCE = 26 V
ICQ = 200 mA
*Note: f1 = 900.00MHz @ 40.5dB m
f2 = 900.01MHz @ 40.5dB m
POUT = 46.5 dBm (45.0W) PEP
** dBT, in dB, referenced to tone level
32
— dBT**
2/6


Part Number SD4701
Description RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS
Maker ST Microelectronics
Total Page 6 Pages
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