STMicroelectronics SD5000
The SD5000 is a NPN Silicon Transistor designed for high gain linear performance at 1000 MHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD5000 can be used for applications such as Telecommunications, Radar, ECM, Space and other commercial and military systems.- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | SD5000 |
|---|---|
| Datasheet | SD5000 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & Microwave Transistor |
| Buy | Stock & Price |
APPLICATIONS
....... GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION POUT = 1.5 W MIN. WITH 9.5 dB GAIN PRELIMINARY DATA .280 4L STUD (M122) epoxy sealed ORDER CODE SD5000 B RA ND IN G S10A015 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symb ol Parameter VCBO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 1. Collector 2. Emitter 3. Base 4. Emitter Value 50 50 3.5 1.0 7.0 +200 − 65 to +150 25 Unit V V V A W °C °C °C/W 1/4 SD5000ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC Symb o l Test Conditions BVCBO BVEBO BVCES BVCEO ICBO hFE IC = 10mA IE = 5mA IC = 10mA IC = 5mA VCB = 28V VCE = 5V IC = 100mA DYNAMIC Symbol POUT 1dB f = 1 GHz GP f = 1 GHz VSWR f = 1 GHz COB f = 1 MHz : Test Conditions VCC = 20 V VCC = 20 V VCC = 20 V VCB = 20 V IC = 220 mA IC = 220 mA IC = 220 mA Valu e Unit Min.
