Datasheet4U Logo Datasheet4U.com

SD57060 - RF POWER TRANSISTOR

Description

The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V.

📥 Download Datasheet

Datasheet preview – SD57060

Datasheet Details

Part number SD57060
Manufacturer STMicroelectronics
File Size 73.26 KB
Description RF POWER TRANSISTOR
Datasheet download datasheet SD57060 Datasheet
Additional preview pages of the SD57060 datasheet.

📁 Similar Datasheet

  • SD5000 - High-Speed DMOS Quad FET (CALOGIC)
  • SD5000 - DMOS JFET SWITCH (LINEAR)
  • SD5000 - N-Channel Lateral DMOS FET (TEMIC)
  • SD5000C - Standard Recovery Diodes (International Rectifier)
  • SD5000R - Standard Recovery Diodes (International Rectifier)
  • SD5001 - High-Speed DMOS Quad FET (CALOGIC)
  • SD5001 - DMOS JFET SWITCH (LINEAR)
  • SD5002 - High-Speed DMOS Quad FET (CALOGIC)
  • SD51 - Schottky Rectifier (Naina)
  • SD51 - Schottky Diodes (Naina Semiconductor)
Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
® SD57060 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s s s s EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 11.5 dB gain @ 945 MHz BeO FREE PACKAGE M243 epoxy sealed ORDER CODE BRANDING SD57060 TSD57060 DESCRIPTION The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity. PIN CONNECTION 1. Drain 2.
Published: |