SGT65R65AL Datasheet E-mode Powergan Transistor

Manufacturer: STMicroelectronics

Overview: SGT65R65AL Datasheet 650 V, 49 mΩ typ., 25 A, e-mode PowerGaN.

Datasheet Details

Part number	SGT65R65AL
Manufacturer	STMicroelectronics
File Size	633.85 KB
Description	e-mode PowerGaN transistor
Datasheet	SGT65R65AL-STMicroelectronics.pdf

General Description

The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology.

The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Product status link SGT65R65AL Product summary Order code SGT65R65AL Marking 65R65A Package PowerFLAT 5x6 HV for PowerGaN Packing Tape and reel DS13251 - Rev 8 - September 2023 For further information contact your local STMicroelectronics sales office.

Key Features

1 2 34 PowerFLAT 5x6 HV for PowerGaN D(5,6,7,8) Order code VDS RDS(on) max. ID SGT65R65AL 650 V 65 mΩ 25 A.
Enhancement mode normally off transistor.
Very high switching speed.
High power management capability.
Extremely low capacitances.
Kelvin source pad for optimum gate driving.
Zero reverse recovery charge Series G-HEMT G(4).

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