SGT65R65AL Overview
Description
The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Key Features
- Enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge Series G-HEMT G(4)
