900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

SMLVT3V3 Datasheet

LOW VOLTAGE TRANSILTM

No Preview Available !

® SMLVT3V3
LOW VOLTAGE TRANSILTM
FEATURES
s UNIDIRECTIONAL TRANSIL DIODE
s PEAK PULSE POWER : 600 W (10/1000µs)
s REVERSE STAND-OFF VOLTAGE = 3.3 V
s LOW CLAMPING FACTOR
s FAST RESPONSE TIME
s UL RECOGNIZED
DESCRIPTION
The SMLVT3V3 is a Transil diode designed
specifically for protecting 3.3V supplied sensitive
equipment against transient overvoltages.
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes then particularly
suited to protect voltage sensitive devices surb as
MOS technology and low voltage supply IC’s.
SMB
(JEDEC DO-214AA)
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
PPP Peak pulse power dissipation (see note 1) Tj initial = Tamb
P Power dissipation on infinite heatsink
Tamb = 75°C
IFSM Non repetitive surge peak forward current tp = 10 ms
Tj initial = Tamb
Tstg Storage temperature range
Tj Maximum junction temperature
TL Maximum lead temperature for soldering during 10 s
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
Value
600
5
50
- 65 to + 175
175
260
Unit
W
W
A
°C
°C
°C
THERMAL RESISTANCE
Symbol
Rth (j-l)
Rth (j-a)
Parameter
Junction to leads
Junction to ambient on printed circuit on recommended pad
layout
Value
20
100
Unit
°C/W
°C/W
August 2001 - Ed : 2
1/4


STMicroelectronics Electronic Components Datasheet

SMLVT3V3 Datasheet

LOW VOLTAGE TRANSILTM

No Preview Available !

SMLVT3V3
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage.
VBR Breakdown voltage.
VCL Clamping voltage.
IRM Leakage current @ VRM.
IPP Peak pulse current.
αT Voltage temperature coefficient
VF Forward voltage drop
I
IF
VCL VBR
VRM
VF
I RM
I PP
V
Type
IRM @ VRM
max
A
SMLVT3V3 200
V
3.3
VBR @ IR
min
note 2
V mA
4.1 1
VCL @ IPP
max
10/1000 µs
VA
7.3 50
VCL @ IPP
max
8/20 µs
VA
10.3 200
αT C
max max
note 3 note 4
10-4/°C pF
-5.3 5200
%I
PP
100
50
10 µS
P U LSE W AVE FO RM 1 0 /1 0 0 0 µ S
0
1000 µS
Note 2 : Pulse test : tp < 50 ms
Note 3 : VBR = αT * (Tamb - 25) * VBR(25°C).
Note 4 : VR = 0V , F = 1MHz.
T
Fig. 1 : Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
PPP[Tj initial]
PPP[Tj initial = 25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Tj initial (°C)
0.0
0 25 50 75 100 125 150 175 200
2/4


Part Number SMLVT3V3
Description LOW VOLTAGE TRANSILTM
Maker STMicroelectronics
Total Page 4 Pages
PDF Download

SMLVT3V3 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SMLVT3V3 LOW VOLTAGE TRANSILTM
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy