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ST1802FH Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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® ST1802FH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s NEW Fully Plastic TO-220 for HIGH
VOLTAGE APPLICATIONS
s NEW SERIES, ENHANCED PERFORMANCE
s EASY MOUNTING
s HIGH VOLTAGE CAPABILITY ( > 1500 V )
s HIGH SWITCHING SPEED
s TIGTHER hfe CONTROL
s IMPROVED RUGGEDNESS
s FULLY MOLDED INSULATED PACKAGE
(U.L. COMPLIANT) FOR EASY MOUNTING
s CREEPAGE DISTANCE PATH > 4 mm
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOR
TVs UP TO 21 INCHES
DESCRIPTION
The device is manufactured using Diffused
Collector Technology for more stable operation
Vs base drive circuit variations resulting in very
low worst case dissipation.
TO-220FH
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V EBO
IC
ICM
IB
Ptot
Vi so l
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Total Dissipation at Tc = 25 oC
Insulation W ithstand Voltage (RMS) from All
Three Leads to External Heatsink
St orage Temperature
Max. Operating Junction Temperature
December 2002
Value
1500
600
7
10
15
4
40
2500
-65 to 150
150
Uni t
V
V
V
A
A
A
W
V
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

ST1802FH Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

No Preview Available !

ST1802FH
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
3.125
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V TC = 125 oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus )Collector-Emit ter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VBE(s at)Base-Emitt er
Saturation Voltage
VEB = 7 V
IC = 100 mA
IC = 4 A
IC = 4 A
IC = 4.5 A
L = 25 mH
IB = 0.8 A
IB = 1.2 A
IB = 1 A
hF EDC Current Gain
IC = 1 A
IC = 5 A
IC = 5 A
VCE = 5 V
VCE = 1 V
VCE = 5 V
INDUCTIVE LO AD
ts Storage Time
tf Fall Time
IC = 4 A
LB = 5 µH
f = 16 KHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IBon (END) = 1 A
VBB(off) = -2.5 V
(see figure 1)
Min. Typ.
600
25
4.5
4
2.6
0.2
Max.
1
2
1
5
1.5
1.2
9
4
0.6
Unit
mA
mA
mA
V
V
V
V
µs
µs
Safe Operating Area
Thermal Impedance
2/6


Part Number ST1802FH
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Maker ST Microelectronics
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ST1802FH Datasheet PDF






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