ST1803DFH Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM RBE =20 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 10 15 4 40 2500 -65 to 150 150 Unit V V V A A A W V o o December 2002 1/6 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 3.125 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I EBO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1500 V V CE = 1500 V V EB = 4 V I E = 700 m A Tj = 125 o C 130 7 Min. Typ. Max. 1 2 400 Unit m A m A m A V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ IC = 4 A IC = 4 A IC = 4 A IC = 1 A I C = 4.5 A I C = 4.5 A IF = 5 A IC = 4 A LB = 5 µH f = 16 KHz I B = 0.8 A I B = 1.2 A I B = 0.8 A V CE = 5 V V CE = 1 V V CE = 5 V I Bon(END) = 0.8 A V BB = -2.5 V (see figure 1) 10 5 5 1.5 1.2 15 5 1.5 2.7 0.3 20 9 2 4 0.6 V µs µs VF ts tf Diode Forward Voltage INDUCTIVE LOAD Storage Time Fall Time ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/6 Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 Power losses Switching Time Inductive Load Reverse Biased SOA Figure 1:...