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ST1803DFX Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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® ST1803DFX
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s NEW SERIES, ENHANCED PERFORMANCE
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s INTEGRATED FREE WHEELING DIODE
s HIGH VOLTAGE CAPABILITY (> 1500 V)
s HIGH SWITCHING SPEED
s TIGTHER hfe CONTROL
s IMPROVED RUGGEDNESS
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOR
TVS UP TO 29 INCHES
DESCRIPTION
The ST1803DFX is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ISOWATT218FX
INTERNAL SCHEMATIC DIAGRAM
RBE =20
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Visol
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Total Dissipation at Tc = 25 oC
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
December 2003
Value
1500
600
7
10
15
4
60
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

ST1803DFX Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

No Preview Available !

ST1803DFX
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.1 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V Tj = 125 oC
IEBO
V(BR)EBO
VCE(sat)
Emitter Cut-off Current
(IC = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 4 V
IE = 700 mA
IC = 4 A
IC = 4 A
IB = 0.8 A
IB = 1.2 A
VBE(sat)Base-Emitter
Saturation Voltage
IC = 4 A
IB = 0.8 A
hFEDC Current Gain
IC = 1 A
IC = 4.5 A
IC = 4.5 A
VCE = 5 V
VCE = 1 V
VCE = 5 V
VF Diode Forward Voltage IF = 5 A
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
IC = 4 A
LB = 5 µH
f = 16 KHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IBon(END) = 0.8 A
VBB = -2.5 V
(see figure 1)
Min. Typ.
130
7
3
10 15
5
5
1.5
2.7
0.3
Max.
1
2
400
5
1.5
1.2
20
9
2
4
0.6
Unit
mA
mA
mA
V
V
V
V
V
µs
µs
Safe Operating Area
Thermal Impedance
2/6


Part Number ST1803DFX
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Maker STMicroelectronics
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ST1803DFX Datasheet PDF





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